EC8252 – ELECTRONIC DEVICES ED Regulation 2017
UNIT I SEMICONDUCTOR DIODE
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.
UNIT II BIPOLAR JUNCTION TRANSISTORS
NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB, CC – Hybrid -π model – h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.
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Course Curriculum
| UNIT 1 SEMICONDUCTOR DIODE | |||
| EC8252 – unit 1 – Introduction | FREE | 00:00:00 | |
| EC8252 – unit 1 – Semiconductor | FREE | 00:00:00 | |
| EC8252 – unit 1 -Insulators | FREE | 00:00:00 | |
| EC8252 – unit 1 -N type semiconductor | FREE | 00:00:00 | |
| EC8252 – unit 1 -P type semiconductor | 00:00:00 | ||
| EC8252 – unit 1 -PN junction diode | 00:00:00 | ||
| EC8252 – unit 1 -Operation of PN junction diode forward bias & reverse bias | 00:00:00 | ||
| EC8252 – unit 1 -VI characteristics of PN junction diode | 00:00:00 | ||
| EC8252 – unit 1 -Diode current equation | 00:00:00 | ||
| EC8252 – unit 1 -Drift & Diffusion current | 00:00:00 | ||
| EC8252 – unit 1 -Diode & switching characteristics | 00:00:00 | ||
| EC8252 – unit 1 – Application of diode and overview of unit 1 | 00:00:00 | ||
| UNIT 2 BIPOLAR JUNCTION TRANSISTORS | |||
| EC8252 – unit 2 -Introduction | 00:00:00 | ||
| EC8252 – unit 2 -BJT NPN PNP | 00:00:00 | ||
| EC8252 – unit 2 -Transistor current equation | 00:00:00 | ||
| EC8252 – unit 2 -H parameter model CC, CB, CE | 00:00:00 | ||
| EC8252 – unit 2 -Early voltage | 00:00:00 | ||
| EC8252 – unit 2 -CB configuration | 00:00:00 | ||
| EC8252 – unit 2 -CE configuration | 00:00:00 | ||
| EC8252 – unit 2 -CC configuration | 00:00:00 | ||
| EC8252 – unit 2 -Hybrid – Pi model | 00:00:00 | ||
| EC8252 – unit 2 -Eber’s Moll model of transistor | 00:00:00 | ||
| EC8252 – unit 2 -Gummel poon model | 00:00:00 | ||
| EC8252 – unit 2 -Multi emitter transistor | 00:00:00 | ||
| UNIT 3 FIELD EFFECT TRANSISTORS | |||
| EC8252 – unit 3 Introduction | 00:00:00 | ||
| EC8252 – unit 3 -JFET’S ,channel ,operation | 00:00:00 | ||
| EC8252 – unit 3 -Characteristics of JFET | 00:00:00 | ||
| EC8252 – unit 3 -Transfer characteristics | 00:00:00 | ||
| EC8252 – unit 3 -JFET parameter | 00:00:00 | ||
| EC8252 – unit 3 – MOSFET, depletion | 00:00:00 | ||
| EC8252 – unit 3 -Characteristics of depletion type | 00:00:00 | ||
| EC8252 – unit 3 -Enhancement type MOSFET | 00:00:00 | ||
| EC8252 – unit 3 -Characteristics of enhancement | 00:00:00 | ||
| EC8252 – unit 3 -Dual gate | 00:00:00 | ||
| EC8252 – unit 3 – FINFET | 00:00:00 | ||
| UNIT 4 SPECIAL SEMICONDUCTOR DEVICES | |||
| EC8252 – unit 4 – introduction | 00:00:00 | ||
| EC8252 – unit 4 -Metal semiconductor junction diode | 00:00:00 | ||
| EC8252 – unit 4 – MESFET | 00:00:00 | ||
| EC8252 – unit 4 – Schottky barrier diode | 00:00:00 | ||
| EC8252 – unit 4 -zener diode | 00:00:00 | ||
| EC8252 – unit 4 -varactor diode | 00:00:00 | ||
| EC8252 – unit 4 -Laser diode | 00:00:00 | ||
| EC8252 – unit 4 -light dependent resistor | 00:00:00 | ||
| EC8252 – unit 4 -Gallium arsenide device | 00:00:00 | ||
| EC8252 – unit 4 -Tunnel diode | 00:00:00 | ||
| UNIT 5 POWER DEVICES AND DISPLAY DEVICES | |||
| EC8252 – unit 5 -Introduction to unit 5 | 00:00:00 | ||
| EC8252 – unit 5 -SCR | 00:00:00 | ||
| EC8252 – unit 5 – VI characteristics of SCR | 00:00:00 | ||
| EC8252 – unit 5 -TRIAC | 00:00:00 | ||
| EC8252 – unit 5 -Uni junction transistor | 00:00:00 | ||
| EC8252 – unit 5 -DIAC | 00:00:00 | ||
| EC8252 – unit 5 -Power BJT | 00:00:00 | ||
| EC8252 – unit 5 -Merits, Demerits & Application of Power BJT | 00:00:00 | ||
| EC8252 – unit 5 – Power MOSFET | 00:00:00 | ||
| EC8252 – unit 5 -LCD | 00:00:00 | ||
| EC8252 – unit 5 -LED | 00:00:00 | ||
| EC8252 – unit 5 -Photo transistor | 00:00:00 | ||
| EC8252 – unit 5 – Solar cell | 00:00:00 | ||
| EC8252 – unit 5 -Opto coupler | 00:00:00 | ||
| EC8252 – unit 5 – CCD | 00:00:00 | ||
